2008. 5. 27 1/4 semiconductor technical data KMB4D5DN60QA dual n-ch trench mosfet revision no : 0 general description this trench mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. it is mainly suitable for load switch and back light inverter. features v dss =60v, i d =4.5a. drain-source on resistance. r ds(on) =56m (max.) @ v gs =10v r ds(on) =77m (max.) @ v gs =4.5v mosfet maximum ratings (ta=25 unless otherwise noted) b2 g h b1 1 4 5 8 a p d l t flp-8 0.20+0.1/-0.05 t p 1.27 millimeters dim a 4.85 0.2 + _ b1 3.94 0.2 + _ b2 6.02 0.3 + _ d 0.4 0.1 + _ g 0.15+0.1/-0.05 h 1.63 0.2 + _ l 0.65 0.2 + _ note> *surface mounted on 1? 1? fr4 board, t 10sec. 1 2 3 4 8 7 6 5 s 1 g 1 s 2 g 2 d 1 d 1 d 2 d 2 1 2 3 4 8 7 6 5 kmb4d5dn 60qa pin connection (top view) characteristic symbol pating unit drain source voltage v dss 60 v gate source voltage v gss 20 v drain current dc@ta=25 i d * 4.5 a pulsed i dp 20 a drain source diode forward current i s 3 a drain power dissipation @ta=25 p d * 2 w maximum junction temperature t j 150 storage temperature range t stg -55~150 thermal resistance, junction to ambient r thja * 62.5 /w
2008. 5. 27 2/4 KMB4D5DN60QA revision no : 0 electrical characteristics (ta=25 ) unless otherwise noted characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss v gs =0v, i ds =250 a 60 - - v drain cut-off current i dss v gs =0v, v ds =48v - - 1 a gate leakage current i gss v gs = 20v, v ds =0v - - 100 na gate threshold voltage v th v ds =v gs, i d =250 a 1.0 - 3.0 v drain-source on resistance r ds(on) * v gs =10v, i d =4.5a - 46 56 m v gs =4.5v, i d =3a - 64 77 forward transconductance g fs * v ds =5v, i d =4.5a - 11 - s dynamic input capaclitance c iss * v ds =30v, v gs =0v, f=1mhz - 490 - pf ouput capacitance c oss * - 45 - reverse transfer capacitance c rss * - 25 - total gate charge v gs =10v q g * v ds =30v, v gs =10v, i d =4.5a - 10.4 - nc v gs =4.5v - 5.1 - gate-source charge q gs * - 2.3 - gate-drain charge q gd * - 2.2 - turn-on delay time t d(on) * v ds =30v, v gs =10v i d =4.5 , r g =3 - 12.4 - ns turn-on rise time t r * - 34.5 - turn-off delay time t d(off) * - 30.7 - turn-off fall time t f * - 5.0 - source-drain diode ratings source-drain forward voltage v sdf * v gs =0v, i s =1a - 0.7 1.0 v note> *pulse test : pulse width 300 , duty cycle 2%
2008. 5. 27 3/4 KMB4D5DN60QA revision no : 0 0 0 1 5 10 15 20 2345 v gs =4.5v v gs =10v 5 0 0 10 15 20 12 4 35 on-resistance r ds(on) (m ? ) fig1. i d - v ds drain current i d (a) drain current i s (a) drain current i d (a) drain - source voltage v ds (v) fig3. i d - v gs drain current i d (a) gate source voltage v gs (v) 05 20 50 40 30 60 70 80 90 100 10 15 20 fig2. r ds(on) - i d 0.2 0 0.001 0.6 0.4 1.2 1.0 0.8 0.1 0.01 100 10 1 fig 6. i s - v sdf source-drain forward voltage v sdf (v) 25 c 125 c v ds =5v 25 c 125 c v gs =5.0v v gs =4.5v v gs =10v v gs =4.0v v gs =3.5v drain- sourceon-resistance r ds(on) (m ? ) 0 90 150 30 60 120 -25 150 50 75 100 125 25 -50 0 -75 v gs =10v, i d =4.5a junction temperature tj ( ) c fig4. r ds(on) - t j -75 -50 -25 0 50 100 75 125 150 25 0 1 4 2 5 3 junction temperature tj ( ) c v gs =v ds i d =250 a gate threshold voltage v th (v) fig5. v th - t j t a =25 c
2008. 5. 27 4/4 KMB4D5DN60QA revision no : 0 4 2 0 0 812 10 6 10 8 6 4 2 fig7. v gs - q g gate to source voltage v gs (v) gate charge q g (nc) v ds =30v i d =4.5a c iss c oss c rss f=1mhz 10 0 0 30 40 20 800 600 400 200 fig8. c - v ds capacitance c (pf) drain - source voltage v ds (v) square wave pulse duration tw (sec) 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 -4 fig9. transient thermal response curve t 1 t 2 p dm 1. duty cycle, d = 2. per unit base = r thja = 62.5 c/w t 1 t 2 drain current i d (a) drain - source voltage v ds (v) fig9. safe operation area 10 1 10 1 10 2 10 3 10 -2 10 -1 10 -2 10 -1 10 0 10 0 10 2 v gs = 10v single pulse 1ms 200 s 10ms 10s 100ms 1s dc 10 -3 10 -1 10 0 10 -2 normalized transient thermal resistance 0.02 0.1 0.2 duty cycle = 0.5 0.05 single pulse operation in this area is limited by r ds(on)
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